Semiconductors compounds iv-vi films by hwbe growth technique

Autores

  • Sergio Tuan Renosto Lorena Engineering School - EEL, University of São Paulo – USP.
  • Lívia Souza Ribeiro Materials Division - AMR, Aeronautics and Space Institute – IAE.
  • Joaquim Tavares de Lima Center Aerospace Technician – CTA.
  • Sônia Guimarães Center Aerospace Technician – CTA.

Resumo

Infrared detectors are radiant energy transducers, which convert this energy in electric energy, and
usually have to be cooled and kept at 77 K to work property. A tool that comes if shown sufficiently useful of research
is the thermographic that is the technology of acquisition of images generated from the capitation of the
thermal infrared radiation, to detect these emissions of is extreme importance for aeronautical and warlike industries.
Analyzes generates by Scanning Electronic Microscopy (SEM) and X-Ray Diffraction were used in order
to compare epitaxial layers of the semiconductor with narrow gap lead telluride (PbTe), grown of high quality by
Hot Wall Beam Epitaxy technique (HWBE or only HWE) and Flash Evaporation (FE), directly over single crystal silicon
(Si) wafers, p-type. These heterojunctions are used as thermal infrared detectors, which work at room temperature
(Guimarães, Zassavitskii, Bandeira, 2000).
Keywords: epitaxial growth, lead telluride, Si.

Downloads

Publicado

2009-08-05

Edição

v. 14 n. 1 (2008)

Seção

Artigos

Licença

A submissão de originais para este periódico implica na transferência, pelos autores, dos direitos de publicação impressa e digital. Os direitos autorais para os artigos publicados são do autor, com direitos do periódico sobre a primeira publicação. Os autores somente poderão utilizar os mesmos resultados em outras publicações indicando claramente este periódico como o meio da publicação original.