SEMICONDUCTORS COMPOUNDS IV-VI FILMS BY HWBE GROWTH TECHNIQUE

Authors

  • Sergio Tuan Renosto Lorena Engineering School - EEL, University of São Paulo – USP.
  • Lívia Souza Ribeiro Materials Division - AMR, Aeronautics and Space Institute – IAE.
  • Joaquim Tavares de Lima Center Aerospace Technician – CTA.
  • Sônia Guimarães Center Aerospace Technician – CTA.

Abstract

Infrared detectors are radiant energy transducers, which convert this energy in electric energy, and usually have to be cooled and kept at 77 K to work property. A tool that comes if shown sufficiently useful of research is the thermographic that is the technology of acquisition of images generated from the capitation of the thermal infrared radiation, to detect these emissions of is extreme importance for aeronautical and warlike industries. Analyzes generates by Scanning Electronic Microscopy (SEM) and X-Ray Diffraction were used in order to compare epitaxial layers of the semiconductor with narrow gap lead telluride (PbTe), grown of high quality by Hot Wall Beam Epitaxy technique (HWBE or only HWE) and Flash Evaporation (FE), directly over single crystal silicon (Si) wafers, p-type. These heterojunctions are used as thermal infrared detectors, which work at room temperature (Guimarães, Zassavitskii, Bandeira, 2000). Keywords: epitaxial growth, lead telluride, Si.

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Published

2009-08-05

Issue

Vol. 14 No. 1 (2008)

Section

Articles

License

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